MAC15 series triacs silicon bidirectional thyristors designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. features ? blocking voltage to 800 v ? all diffused and glass passivated junctions for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? gate triggering guaranteed in three modes (MAC15 series) or four modes (MAC15a series) ? these devices are pb-free and are rohs compliant* maximum ratings (tj = 25c unless otherwise noted) rating peak repetitive off-state voltage note 1 (tj = -40 to +1 25c, sine wave 50 to 60 hz, gate open) MAC15a6g MAC15-8g, MAC15a8g MAC15-10g, MAC15a10g peak gate voltage (pulse width < 1 ,0 usec; tc = 90c) on-state current rms; full cycle sine wave 50 to 60 hz (tc = +90c) circuit fusing consideration (t = 8.3 ms) peak non-repetitive surge current (one full cycle sine wave, 60 hz, tc = +80c) preceded and followed by rated current peak gate power (tc = +80c, pulse width = 1.0 us) average gate power (tc = +80c, t = 8.3 ms) peak gate current (pulse width < 1 .0 (isec; tc = 90c) operating junction temperature range storage temperature range symbol vdrm, vrrm vgm !t(rms) i2t itsm pgm pg(av) igm tj tstg value 400 600 800 10 15 93 150 20 0.5 2.0 -40 to +125 -40 to +150 unit v v a a2s a w w a c c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. vdrm and vrrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 triacs 15 amperes rms 400 thru 800 volts mt2 o mt1 marking diagram to-220ab MAC15xx = specific device code xx = see table on page 2 a = assembly location (optional)* y = year ww = work week nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time ofgoing to press. however, nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
MAC15 series thermal characteristics characteristic thermal resistance, junction-to-case thermal resistance, junction-to-ambient maximum lead temperature for soldering purposes 1/8" from case for 10 seconds symbol rejc rhja tl value 2.0 62.5 260 unit c/w c/w c electrical characteristics (tc = 25c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak blocking current tj = 25c (vd = rated vdrm, vrrm; gate open) tj = 1 25c idrm, irrm - - 10 2.0 ha ma on characteristics peak on-state voltage note 2 (|jm = 21 a peak) gate trigger current (continuous dc) (vd = 12 vdc, r|_ = 100 q) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) mt2(-), g(+) "a" suffix only gate trigger voltage (continuous dc) (vd = 12 vdc, rl = 100 q) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) mt2(-), g(+) "a" suffix only gate non-trigger voltage (vd = 1 2 v, rl = 1 00 q) tj = 1 1 0c) mt2(+), g(+); mt2(-), g(-); mt2(+), g(-) mt2(-), g(+) "a" suffix only holding current (vp = 12 vdc, gate open, initiating current = 200 ma) turn-on time (vd = rated vdrm, itm = 17 a) (igt = 120 ma, rise time = 0.1 (is, pulse width = 2 \i&) vtm igt vgt vgd ih 'gt - - - 0.2 0.2 - - 1.3 - 0.9 0.9 1.1 1.4 ? 6.0 1.5 1.6 50 50 50 75 2 2 2 2.5 : 40 - v ma v v ma (is dynamic characteristics critical rate of rise of commutation voltage (vd = rated vdrm, itm = 21 a, commutating di/dt = 7.6 a/ms, gate unenergized, tc = 80c) dv/dt(c) - 5.0 - v/^s 2. pulse test: pulse width < 2.0 ms, duty cycle < 2%.
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